| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package | 
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| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
                 
                 
                
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                    MSC090SMA070BSICFET N-CH 700V TO247-3 Microchip Technology  |  
                127 | - | 
                
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                - | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 700 V | - | - | - | - | - | - | - | - | - | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 | 
                 
                 
                
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                    MSC180SMA120SMOSFET SIC 1200 V 180 MOHM TO-26 Microchip Technology  |  
                256 | - | 
                
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                - | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 21A (Tc) | 20V | 225mOhm @ 8A, 20V | 3.26V @ 500µA | 34 nC @ 20 V | +23V, -10V | 510 pF @ 1000 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D3PAK | 
                 
                 
                
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                    APT22F80BMOSFET N-CH 800V 23A TO247 Microchip Technology  |  
                262 | - | 
                
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                - | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 23A (Tc) | 10V | 500mOhm @ 12A, 10V | 5V @ 1mA | 150 nC @ 10 V | ±30V | 4595 pF @ 25 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] | 
                 
                 
                
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                    APT30M70BVRGMOSFET N-CH 300V 48A TO247 Microchip Technology  |  
                101 | - | 
                
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                POWER MOS V® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 48A (Tc) | 10V | 70mOhm @ 500mA, 10V | 4V @ 1mA | 225 nC @ 10 V | ±30V | 5870 pF @ 25 V | - | 370W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] | 
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                    MSC035SMA070B4TRANS SJT N-CH 700V 77A TO247-4 Microchip Technology  |  
                136 | - | 
                
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                - | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 700 V | 77A (Tc) | 20V | 44mOhm @ 30A, 20V | 2.7V @ 2mA (Typ) | 99 nC @ 20 V | +23V, -10V | 2010 pF @ 700 V | - | 283W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 | 
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                    VP2206N2MOSFET P-CH 60V 750MA TO39 Microchip Technology  |  
                919 | - | 
                
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                - | TO-205AD, TO-39-3 Metal Can | Bag | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 750mA (Tj) | 5V, 10V | 900mOhm @ 3.5A, 10V | 3.5V @ 10mA | - | ±20V | 450 pF @ 25 V | - | 360mW (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-39 | 
                 
                 
                
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                    APT60N60BCSGMOSFET N-CH 600V 60A TO247 Microchip Technology  |  
                132 | - | 
                
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                - | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 60A (Tc) | 10V | 45mOhm @ 44A, 10V | 3.9V @ 3mA | 190 nC @ 10 V | ±30V | 7200 pF @ 25 V | - | 431W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] | 
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                    MSC025SMA120SSICFET N-CH 1.2KV 100A D3PAK Microchip Technology  |  
                127 | - | 
                
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                - | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 89A (Tc) | - | - | - | - | - | - | - | - | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D3PAK | 
                 
                 
                
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                    APT50M38JLLMOSFET N-CH 500V 88A ISOTOP Microchip Technology  |  
                89 | - | 
                
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                POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 88A (Tc) | 10V | 38mOhm @ 44A, 10V | 5V @ 5mA | 270 nC @ 10 V | ±30V | 12000 pF @ 25 V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® | 
                 
                 
                
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                    APT10021JFLLMOSFET N-CH 1000V 37A ISOTOP Microchip Technology  |  
                56 | - | 
                
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                POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 37A (Tc) | 10V | 210mOhm @ 18.5A, 10V | 5V @ 5mA | 395 nC @ 10 V | ±30V | 9750 pF @ 25 V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® | 


                
                
                
                