制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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GT023N10MN100V,140A,RD<2.7M@10V,VTH2.7V~4 Goford Semiconductor |
800 | - |
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SGT | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 226A (Tc) | 10V | 2.7mOhm @ 20A, 10V | 4.3V @ 250µA | 121 nC @ 10 V | ±20V | 8148 pF @ 50 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 |
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G86N06KN60V,RD(MAX)<8.4M@10V,VTH2V~4V , Goford Semiconductor |
4,960 | - |
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TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 80A (Tc) | 10V | 8mOhm @ 4A, 10V | 4V @ 250µA | 77 nC @ 10 V | ±20V | 2860 pF @ 25 V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
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GT095N10KN100V, RD(MAX)<10.5M@10V,RD(MAX) Goford Semiconductor |
6,422 | - |
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SGT | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 55A (Tc) | 4.5V, 10V | 10.5mOhm @ 35A, 10V | 2.5V @ 250µA | 54 nC @ 10 V | ±20V | 1667 pF @ 50 V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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GT095N10D5N100V,RD(MAX)<11M@10V,RD(MAX)<15 Goford Semiconductor |
14,841 | - |
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SGT | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 55A (Tc) | 4.5V, 10V | 10.5mOhm @ 35A, 10V | 2.5V @ 250µA | 54 nC @ 10 V | ±20V | 1683 pF @ 50 V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (4.9x5.75) |
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GT1K2P15KMOSFET P-CH 150V 27A TO-252 Goford Semiconductor |
2,500 | - |
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- | - | Tape & Reel (TR) | Active | - | MOSFET (Metal Oxide) | - | 27A (Tc) | 4.5V, 10V | 110mOhm @ 15A, 10V | 3V @ 250µA | 86 nC @ 10 V | ±20V | 3275 pF @ 75 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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GT2K0P20KMOSFET P-CH 200V 18A 138W 220M(M Goford Semiconductor |
2,500 | - |
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SGT | - | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 18A (Tc) | 10V, 4.5V | 220mOhm @ 15A, 10V | 3V @ 250µA | 70 nC @ 10 V | 20V | 3400 pF @ 100 V | - | 138W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | - |
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GT400P10KMOSFET P-CH 100V 35A TO-252 Goford Semiconductor |
1,205 | - |
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SGT | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 35A (Tc) | 4.5V, 10V | 35mOhm @ 10A, 10V | 2.5V @ 250µA | 41 nC @ 10 V | ±20V | 3128 pF @ 50 V | - | 106W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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GT100N12D5N120V,RD(MAX)<10M@10V,VTH2.5V~3. Goford Semiconductor |
5,000 | - |
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- | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 70A | - | 10mOhm @ 35A, 10V | 3.5V @ 250µA | 50 nC @ 10 V | ±20V | 3050 pF @ 60 V | - | 120W | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (5x6) |
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G100N03D5N-CH, 30V, 100A, RD(MAX)<3.5M@10 Goford Semiconductor |
4,885 | - |
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TrenchFET® | 8-PowerTDFN | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 100A (Tc) | 4.5V, 10V | 3.5mOhm @ 20A, 10V | 2.5V @ 250µA | 38 nC @ 10 V | ±20V | 5595 pF @ 50 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (4.9x5.75) |
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GT2K0P20D5MOSFET P-CH 200V 19A 138W 200M(M Goford Semiconductor |
5,000 | - |
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SGT | 8-PowerTDFN | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 19A (Tc) | 10V, 4.5V | 200mOhm @ 15A, 10V | 3V @ 250µA | 70 nC @ 10 V | 20V | 3400 pF @ 100 V | - | 138W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (4.9x5.75) |